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A modified drift-diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors

AutorGarcía López, J. ; Jiménez-Ramos, M. C. ; Rodríguez-Ramos, M. ; Forneris, Jacopo; Ceballos-Cáceres, J.
Fecha de publicación2015
CitaciónIBA 2015
ResumenThe transport properties of a series of n and p-type Si diodes have been studied by the Ion Beam Induced Charge (IBIC) technique using a 4 MeV proton microbeam. The samples were irradiated with 17 MeV protons and fluences ranging from 1x1012 to 1x1013 p/cm2 in order to produce a uniform profile of defects with depth. The analysis of the charge collection efficiency (CCE) as a function of the reverse bias voltage has been carried out using a modified drift-diffusion (D-D) model which takes into account the possibility of carrier recombination not only in the neutral substrate, as the simple D-D model assumes, but also within the depletion region. This new approach for calculating the CCE is fundamental when the drift length of carriers cannot be considered much greater that the thickness of the detector due to the ion induced damage. From our simulations, we have obtained the values of the carrier lifetimes for the pristine and irradiated diodes, which have allowed us to calculate the effective trapping cross sections using the one dimension Shockley-Read-Hall model. The results of our calculations have been compared to the data obtained using a recently developed Monte Carlo code for the simulation of IBIC analysis, based on the probabilistic interpretation of the excess carrier continuity equations.
DescripciónResumen del trabajo presentado a la 22nd International Conference on Ion Beam Analysis, celebrada en Opatija (Croacia) del 14 al 19 de junio de 2015.
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