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Título

Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

Fecha de publicación 22-ago-2017
EditorSpringer
ResumenThe high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment’s silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to Φeq=2×1016  cm -2 , and an ionising dose of ≈5  MGy after an integrated luminosity of 3000 fb -1 . Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200  μ m thick p-bulk pad diodes and strip sensors irradiated up to fluences of Φeq=1.3×1016  cm -2 are shown. Springer
URI http://hdl.handle.net/10261/154437
DOI10.1140/epjc/s10052-017-5115-z
ISSN1434-6052
Aparece en las colecciones: Sponsoring Consortium for Open Access Publishing in Particle Physics - SCOAP3
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