English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/151403
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Simulation of STEM-HAADF Image Contrast of Ruddlesden–Popper Faulted LaNiO3 Thin Films

AuthorsColl, Catalina; López Conesa, Lluís; Rebled, José Manuel ; Magén, César; Sánchez Barrera, Florencio ; Fontcuberta, Josep ; Estradé, Sònia; Peiró, Francesca
KeywordsDepostition
Crystals
Issue Date4-May-2017
PublisherAmerican Chemical Society
CitationJournal of Physical Chemistry C 121(17): 9300-9304 (2017)
AbstractLaNiO3 (LNO) thin films are widely used as electrode materials. Yet, their properties greatly depend on such parameters as strain state and defect density. In this work we present a detailed structural characterization of epitaxial LNO thin films grown on LaAlO3(001). Based on scanning transmission electron microscope - high-angle annular dark-field imaging (STEM-HAADF) contrast analysis and image simulations, Ruddlesden-Popper faulted configurations, with 1/2a<111> relative displacement of defect free perovskite blocks, are atomically modeled and simulated to disentangle the variation of Z-contrast in the experimental images.
Publisher version (URL)http://dx.doi.org/10.1021/acs.jpcc.6b12484
URIhttp://hdl.handle.net/10261/151403
DOI10.1021/acs.jpcc.6b12484
ISSN1932-7447
Appears in Collections:(ICMAB) Artículos
Files in This Item:
File Description SizeFormat 
Coll_JPhysChemC_2017_postprint.pdf776,24 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.