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Open Access item Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy

Authors:Fuster, David
Rivera, Antonio
Alén, Benito
Alonso-González, Pablo
González, Yolanda
González, Luisa
Keywords:Crystallisation, III-V semiconductors, Indium compounds, Molecular beam epitaxial growth, Nucleation, self-assembly, Semiconductor growth, Semiconductor quantum dots, Surface reconstruction
Issue Date:1-Apr-2009
Publisher:American Institute of Physics
Citation:Applied Physics Letters, 94, 133106 (2009)
Abstract:We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated deposition of In and As correlated with InAs(4×2)(2×4) surface reconstruction changes. Based on the results obtained by in situ characterization techniques, we propose that the quantum dots formation is possible due to the nucleation of In droplets over the InAs(4×2) surface during the In deposition step and their subsequent crystallization under the As step.
Publisher version (URL):http://link.aip.org
http://dx.doi.org/10.1063/1.3108087
URI:http://hdl.handle.net/10261/15094
ISSN:0003-6951
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Appears in Collections:(IMM-CNM) Artículos

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