Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/15094
Share/Impact:
Título : Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy
Autor : Fuster, David, Rivera de Mena, Antonio, Alén, Benito, Alonso-González, Pablo, González Díez, Yolanda, González Sotos, Luisa
Palabras clave : Crystallisation
III-V semiconductors
Indium compounds
Molecular beam epitaxial growth
Nucleation, self-assembly
Semiconductor growth
Semiconductor quantum dots
Surface reconstruction
Fecha de publicación : 1-Apr-2009
Editor: American Institute of Physics
Citación : Applied Physics Letters, 94, 133106 (2009)
Resumen: We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated deposition of In and As correlated with InAs(4×2)(2×4) surface reconstruction changes. Based on the results obtained by in situ characterization techniques, we propose that the quantum dots formation is possible due to the nucleation of In droplets over the InAs(4×2) surface during the In deposition step and their subsequent crystallization under the As step.
Versión del editor: http://link.aip.org
http://dx.doi.org/10.1063/1.3108087
URI : http://hdl.handle.net/10261/15094
ISSN: 0003-6951
DOI: 10.1063/1.3108087
Appears in Collections:(IMM-CNM) Artículos

Files in This Item:
File Description SizeFormat 
Fuster, David et al Appl.Phys.Lett._94_2009.pdf291,6 kBAdobe PDFView/Open
Show full item record
 
CSIC SFX LinksSFX Query


Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.