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Título: | Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy |
Autor: | Fuster, David CSIC ORCID ; Rivera de Mena, Antonio CSIC ORCID; Alén, Benito CSIC ORCID; Alonso-González, Pablo CSIC ORCID ; González Díez, Yolanda CSIC ORCID; González Sotos, Luisa CSIC ORCID | Palabras clave: | Crystallisation III-V semiconductors Indium compounds Molecular beam epitaxial growth Nucleation, self-assembly Semiconductor growth Semiconductor quantum dots Surface reconstruction |
Fecha de publicación: | 1-abr-2009 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters, 94, 133106 (2009) | Resumen: | We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated deposition of In and As correlated with InAs(4×2)(2×4) surface reconstruction changes. Based on the results obtained by in situ characterization techniques, we propose that the quantum dots formation is possible due to the nucleation of In droplets over the InAs(4×2) surface during the In deposition step and their subsequent crystallization under the As step. | Versión del editor: | http://link.aip.org http://dx.doi.org/10.1063/1.3108087 |
URI: | http://hdl.handle.net/10261/15094 | DOI: | 10.1063/1.3108087 | ISSN: | 0003-6951 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Fichero | Descripción | Tamaño | Formato | |
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Fuster, David et al Appl.Phys.Lett._94_2009.pdf | 291,6 kB | Adobe PDF | Visualizar/Abrir |
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