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dc.contributor.authorGhasemi, Foad-
dc.contributor.authorFrisenda, Riccardo-
dc.contributor.authorDumcenco, Dumitru-
dc.contributor.authorKis, Andras-
dc.contributor.authorPérez de Lara, David-
dc.contributor.authorCastellanos-Gómez, Andrés-
dc.date.accessioned2017-05-06T05:37:40Z-
dc.date.available2017-05-06T05:37:40Z-
dc.date.issued2017-03-31-
dc.identifierdoi: 10.3390/electronics6020028-
dc.identifier.citationElectronics 6 (2): 28 (2017)-
dc.identifier.urihttp://hdl.handle.net/10261/149379-
dc.description.abstractThe growth of single-layer MoS<sub>2</sub> with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS<sub>2</sub> crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 µm<sup>2</sup> and 60 µm<sup>2</sup>. Differential reflectance measurements performed on these crystallites show that the area of the MoS<sub>2</sub> crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS<sub>2</sub>. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large-area chemical vapor deposition (CVD)-grown samples.-
dc.description.sponsorshipAndres Castellanos-Gomez acknowledges support from the European Commission (Graphene Flagship: contract CNECTICT-604391), the MINECO (Ramón y Cajal 2014 program RYC-2014-01406 and program MAT2014-58399-JIN) and the Comunidad de Madrid (MAD2D-CM program S2013/MIT-3007). Riccardo Frisenda acknowledges support from The Netherlands Organisation for Scientific Research (NWO, Rubicon 680-50-1515). David Perez de Lara acknowledges support from the MINECO (program FIS2015-67367-C2-1-p). Andras Kis and Dimitri Dumcenco acknowledge funding from Swiss SNF Sinergia Grant No. 147607.-
dc.description.sponsorshipWe acknowledge support by the CSIC Open Access Publication Initiative through its Unit of Information Resources for Research (URICI).-
dc.publisherMultidisciplinary Digital Publishing Institute-
dc.relationinfo:eu-repo/grantAgreement/EC/FP7/604391-
dc.relationMINECO/ICTI2013-2016/RYC-2014-01406-
dc.relationMINECO/ICTI2013-2016/MAT2014-58399-JIN-
dc.relationS2013/MIT-3007/MAD2D-CM-
dc.relation.isversionofPublisher's version-
dc.rightsopenAccess-
dc.titleHigh Throughput Characterization of Epitaxially Grown Single-Layer MoS2-
dc.typeartículo-
dc.identifier.doi10.3390/electronics6020028-
dc.relation.publisherversionhttp://doi.org/10.3390/electronics6020028-
dc.date.updated2017-05-06T05:37:40Z-
dc.rights.licensehttp://creativecommons.org/licenses/by/4.0/-
dc.contributor.funderConsejo Superior de Investigaciones Científicas (España)-
dc.contributor.funderMinisterio de Economía y Competitividad (España)-
dc.contributor.funderEuropean Commission-
dc.contributor.funderComunidad de Madrid-
dc.relation.csic-
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003339es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100003329es_ES
dc.identifier.funderhttp://dx.doi.org/10.13039/501100000780es_ES
dc.contributor.orcidCastellanos-Gómez, Andrés [0000-0002-3384-3405]-
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