English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/149379
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

AuthorsGhasemi, Foad; Frisenda, Riccardo; Dumcenco, Dumitru; Kis, Andras; Pérez de Lara, David; Castellanos-Gómez, Andrés
Issue Date31-Mar-2017
PublisherMultidisciplinary Digital Publishing Institute
CitationElectronics 6 (2): 28 (2017)
AbstractThe growth of single-layer MoS<sub>2</sub> with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS<sub>2</sub> crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 µm<sup>2</sup> and 60 µm<sup>2</sup>. Differential reflectance measurements performed on these crystallites show that the area of the MoS<sub>2</sub> crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS<sub>2</sub>. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large-area chemical vapor deposition (CVD)-grown samples.
Publisher version (URL)http://doi.org/10.3390/electronics6020028
Identifiersdoi: 10.3390/electronics6020028
Appears in Collections:(ICMM) Artículos
Files in This Item:
File Description SizeFormat 
electronics-06-00028-v2.pdf2,69 MBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.