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dc.contributor.authorFernández-Martínez, Pablo-
dc.contributor.authorFlores, David-
dc.contributor.authorHidalgo, Salvador-
dc.contributor.authorJordà, Xavier-
dc.contributor.authorPerpiñá Giribet, Xavier-
dc.contributor.authorQuirion, David-
dc.contributor.authorRé, Lucía-
dc.contributor.authorUllán, Miguel-
dc.contributor.authorVellvehi Hernández, Miquel-
dc.identifierdoi: 10.3390/en10020256-
dc.identifier.citationEnergies 10 (2): 256 (2017)-
dc.description.abstractAn increasing demand for power electronic devices able to be operative in harsh radiation environments is now taking place. Specifically, in High Energy Physics experiments the required power devices are expected to withstand very high radiation levels which are normally too hard for most of the available commercial solutions. In this context, a new vertical junction field effect transistor (JFET) has been designed and fabricated at the Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica (IMB-CNM, CSIC). The new silicon V-JFET devices draw upon a deep-trenched technology to achieve volume conduction and low switch-off voltage, together with a moderately high voltage capability. The first batches of V-JFET prototypes have been already fabricated at the IMB-CNM clean room, and several aspects of their design, fabrication and the outcome of their characterization are summarized and discussed in this paper. Radiation hardness of the fabricated transistors have been tested both with gamma and neutron irradiations, and the results are also included in the contribution.-
dc.description.sponsorshipThe authors would like to heartily thank the Clean Room staff of the IMB-CNM for their dedicated work and kind availability. This work is supported and financed in part by the Spanish Ministry of Economy and Competitiveness through the Particle Physics National Program, ref. FPA2014-55295-C3-2-R and FPA2015-65652-C4-4-R (MINECO/FEDER, UE), and co-financed with FEDER funds and the European Union’s Horizon 2020 research and innovation programme under grant agreement No. 654158. The work is also partially supported by the Generalitat de Catalunya (2014-SGR-1596). The authors want to thank Pedro Valdivieso and co-workers at NAYADE facility (CIEMAT) and the staff on the TRIGA nuclear reactor facilities (JSI), for their efficiency and dedication in performing the managing and irradiation of our devices.-
dc.description.sponsorshipWe acknowledge support by the CSIC Open Access Publication Initiative through its Unit of Information Resources for Research (URICI).-
dc.publisherMultidisciplinary Digital Publishing Institute-
dc.relation.isversionofPublisher's versión-
dc.titleA New Vertical JFET Power Device for Harsh Radiation Environments-
dc.contributor.funderConsejo Superior de Investigaciones Científicas (España)-
dc.contributor.funderMinisterio de Economía y Competitividad (España)-
dc.contributor.funderEuropean Commission-
dc.contributor.funderGeneralitat de Catalunya-
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