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Título: | Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution |
Autor: | Fuster, David CSIC ORCID ; Alén, Benito CSIC ORCID; González Sotos, Luisa CSIC ORCID ; González Díez, Yolanda CSIC ORCID; Martínez Pastor, Juan Pascual CSIC ORCID; González Sagardoy, María Ujué CSIC ORCID ; García Martínez, Jorge Manuel CSIC ORCID CVN | Palabras clave: | Single quantum wires Molecular beam epitaxy |
Fecha de publicación: | 3-ene-2007 | Editor: | Institute of Physics Publishing | Citación: | Nanotechnology 18(3): 035604 (2007) | Resumen: | In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θc, determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θR<θc. At this θR, the spontaneous formation of isolated quantum wires takes place. For θ>θR this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ = θc. These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of InAs/InP self-assembled single quantum wires. | Descripción: | 6 páginas, 5 figuras. | Versión del editor: | http://dx.doi.org/10.1088/0957-4484/18/3/035604 | URI: | http://hdl.handle.net/10261/14925 | DOI: | 10.1088/0957-4484/18/3/035604 | ISSN: | 0957-4484 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Fichero | Descripción | Tamaño | Formato | |
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Fuster, David et al Nanotechnology_18_2007.doc | 1,95 MB | Microsoft Word | Visualizar/Abrir |
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