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Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process

AuthorsFernández, M. ; Gallrapp, Christian; Moll, M.; Muenstermann, D.
KeywordsRadiation-hard electronic
Hybrid detectors
Radiation-hard detectors
Radiation damage to detector materials (solid state)
Issue Date2016
PublisherInstitute of Physics Publishing
CitationJournal of Instrumentation 11: P02016 (2016)
AbstractHigh voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ωcenterdotcm were irradiated with neutrons up to a fluence of 2 × 1016 neq/cm2 and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7 × 1015 neq/cm2 to decrease to the level of the unirradiated detector after 2 × 1016 neq/cm2.
Publisher version (URL)http://dx.doi.org/10.1088/1748-0221/11/02/P02016
Identifiersdoi: 10.1088/1748-0221/11/02/P02016
e-issn: 1748-0221
Appears in Collections:(IFCA) Artículos
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