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Fourfold in-plane magnetic anisotropy of magnetite thin films grown on TiN buffered Si(001) by ion-assisted sputtering

AuthorsPrieto, P.; de la Figuera, Juan ; Martín-García, L.; Prieto, J. E.; Marco, J.F.
Issue Date2016
CitationJournal of Materials Chemistry C 4: 7632- 7639 (2016)
AbstractHighly oriented magnetite thin films showing well-defined fourfold in-plane magnetic anisotropy have been grown on TiN buffered Si(001) substrates by ion beam sputtering assisted by a second ion beam containing a controlled mixture of Ar and O ions. The structure and composition of stoichiometric FeO and non-stoichiometric FeO magnetite thin films have been characterized by X-ray diffraction, Rutherford backscattering spectroscopy and Mössbauer spectroscopy. Magneto-optical Kerr effect measurements show that the maxima of the remanence and coercivity of all these films lie along the Si[010] and [100] directions. The introduction of Fe vacancies in magnetite does not alter the well-defined fourfold in-plane anisotropy but induces a decrease of the coercive field as the number of vacancies increases. Furthermore, the results indicate that a 5 nm TiN thick buffer layer is enough to maintain the FeO[100]/TiN[100]/Si[100] epitaxial relationship.
Identifiersdoi: 10.1039/c6tc02152b
issn: 2050-7526
Appears in Collections:(IQFR) Artículos
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