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Título

Sub-20 nm patterning of thin layer WSe2 by scanning probe lithography

AutorDago, Arancha I.; Ryu, Y. K. ; García García, Ricardo
Fecha de publicación20-oct-2016
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 109: 163103 (2016)
ResumenThe electronic properties of thin layer transition metal dichalcogenides have raised considerable interest in the fabrication of advanced field-effect transistors and ultrasensitive sensors. Downscaling those devices to the nanoscale depends on the development of cost-effective and robust alternative nanolithographies. Here we demonstrate the direct, resist-less and reproducible nanopatterning of tungsten diselenide thin layers. By using oxidation scanning probe lithography (o-SPL) we have generated arrays of dots with a width of 13 nm and periodicity of 40 nm. We have also patterned a point contact of 35 nm and a nanoscale field-effect transistor. The direct and resistless fabrication of WSe2 nanoscale devices by oxidation scanning probe lithography opens a straightforward and reliable method for processing transition metal dichalcogenides materials.
URIhttp://hdl.handle.net/10261/139195
DOI10.1063/1.4965840
ISSN0003-6951
E-ISSN1077-3118
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