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High ferroelectric polarization in c-oriented BaTiO3 epitaxial thin films on SrTiO3/Si(001)

AuthorsScigaj, Mateusz ; Chao, C.H.; Gázquez, Jaume ; Fina, Ignasi ; Herranz, Gervasi ; Fontcuberta, Josep ; Sánchez Barrera, Florencio
Buffer layers
Ferroelectric thin films
X-ray diffraction
Issue Date19-Sep-2016
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 109(12): 122903 (2016)
AbstractThe integration of epitaxial BaTiO3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO3/LaNiO3/SrTiO3 heterostructure is grown monolithically on Si(001). The BaTiO3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm2. This result paves the way towards the fabrication of lead-free BaTiO3 ferroelectric memories on silicon platforms.
DescriptionScigaj, M. et al.
Publisher version (URL)http://dx.doi.org/10.1063/1.4962836
Appears in Collections:(ICMAB) Artículos
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