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Simultaneous study of magnetization reversal and magneto-resistive properties in spin-valve

AuthorsPerna, Paolo; Muñoz Sánchez, Manuel; Miranda, Rodolfo
Properties/Transport/magnetoresistance (transport)
Issue DateApr-2012
CitationMRS Spring Meeting & Exhibit (2012)
AbstractThe giant-magnetoresistance (GMR) effect found in multilayered structures composed by ferromagnetic (FM) layers separated by non-magnetic spacers has attracted sustained interest over the past decades for both fundamental and technological reasons [1,2]. Such effect consists in a significant change of the electrical resistance depending on the relative magnetization orientation of the FM layers, which could originate from spin-dependent scattering processes of the electrons traveling across the structure [3]. Even though it is commonly assumed that the MR depends on the magnetic anisotropy of multilayer structures, a comprehensive description of the magneto-resistive behavior related to the magnetization reversal is still lacking. Experiments just relies in either magnetization (usually parallel component) or MR curves measured independently for a given applied field angle, normally close to the easy axis (e.a.) direction. Here, we present a detailed study of the angular dependence of both magneto-resistive and magnetization reversal properties in a exchange-biased spin valve structure [4], by using a new experimental set-up that allows us to measure simultaneously magneto-resistance and vectorial-resolved Kerr [5] hysteresis loops, i.e., including MR and in-plane parallel and perpendicular magnetization components, at different applied field angles in the whole angular range. We advance towards a microscopic understanding of the MR properties by showing that their angular dependence leaves distinct fingerprints, which are directly related to their magnetization reversal processes. For instance, reversible and irreversible transitions are similar in both MR and vectorial-resolve magnetization curves. Well-defined MR-plateaus are observed around the e.a. direction whereas just reversible MR transitions are found around the hard axis (h.a.) direction. The MR-plateau value decreases as the magnetic field is misaligned with respect to the e.a. and the maximum of MR decreases approaching the h.a. The results directly show that the different magneto-resistive behaviors originate from the magnetic anisotropy of the structure, which ultimately depends on the relative magnetization orientation of the FM layers. References: [1] M.N. Baibich, J.M. Broto, A. Fert, F. Nguyen Van Dau, F. Petroff, P. Eitenne, G. Greuzet, A. Friederich, and J. Chazelas, Phys. Rev. Lett. 61, 2472 (1988); G. Binash, P. Grunberg, F. Saurenbach, and W. Zinn, Phys. Rev. B 39, 4828 (1989). [2] G. A. Prinz, Science 282, 1660 (1998). [3] A. Fert, Angew. Chem. Int. Ed. 47, 5956 (2008); C. Chappert, A. Fert and F. N. Van Dau, Nature Mater. 813, 6 (2007). [4] B. Dieny, V.S. Speriosu, S.S.P. Parkin, B.A. Gurney, D.R. Wilhoit, and D. Mauri, Phys. Rev. B 43, 1297 (1991).
DescriptionComunicación presentada en la MRS Spring Meeting & Exhibit, celebrada en San Francisco del 9 al 13 de abril de 2012.-- Perna, Paolo et al.
Appears in Collections:(IMN-CNM) Artículos
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