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Title

Structural origin of enhanced luminescence efficiency of antimony irradiated InAs quantum dots

AuthorsBeltrán, A. M.; Ben, Teresa; Sales, David L.; Sánchez, A. M.; Ripalda, José María ; Taboada, Alfonso G.; Varela, María; Pennycook, Stephen J.; Molina, Sergio I.
KeywordsTransmission electron microscopy
Quantum dots
inas-gaas
High angle annular dark field
Antonomy
Issue DateNov-2011
PublisherAmerican Scientific Publishers
CitationAdvanced Science Letters 4(11-12): 3776-3778 (2011)
AbstractWe report that Sb irradiation combined with the presence of a GaAs intermediate layer previous to the deposition of a GaSb layer over InAs quantum dots grown by molecular beam epitaxy improves the crystalline quality of these nanostructures. Moreover, this approach to develop III-V-Sb nanostructures causes the formation of quantum dots buried by a confining GaSb layer and, in this way, achieving a type II band alignment. Both phenomena, studied by Conventional transmission electron microscopy (CTEM) and scanning-transmission electron microscope (STEM) techniques are keys to achieve the best room temperature photoluminescence results from InAs/GaAs (001) quantum dots. The Sb flux contributes to the preservation of the quantum dots size and at the same time reduces In diffusion from the wetting layer. © 2011 American Scientific Publishers.
Publisher version (URL)http://dx.doi.org/10.1166/asl.2011.1873
URIhttp://hdl.handle.net/10261/134361
DOI10.1166/asl.2011.1873
Identifiersissn: 1936-6612
e-issn: 1936-7317
Appears in Collections:(IMN-CNM) Artículos
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