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Título: | High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing |
Autor: | Ulloa, J. M.; Llorens Montolio, José Manuel CSIC ORCID; Alén, Benito CSIC ORCID; Reyes, Daniel F.; Sales, David L.; González, David; Hierro, Adrián | Fecha de publicación: | 2012 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 101: 253112 (2012) | Resumen: | The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∿20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition. © 2012 American Institute of Physics. | Versión del editor: | http://dx.doi.org/10.1063/1.4773008 | URI: | http://hdl.handle.net/10261/133431 | DOI: | 10.1063/1.4773008 | Identificadores: | issn: 0003-6951 e-issn: 1077-3118 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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efficient_luminescence_Ulloa.pdf | 1,02 MB | Adobe PDF | Visualizar/Abrir |
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