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Título:	Strain relaxation of GaAs/Ge crystals on patterned Si substrates
Autor:	González Taboada, Alfonso CSIC; Wewior, Lukasz Jakub CSIC; Fuster, David CSIC ORCID ; Känel, H. von
Fecha de publicación:	2014
Editor:	American Institute of Physics
Citación:	Applied Physics Letters 104: 022112 (2014)
Resumen:	We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable {111} facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images. © 2014 AIP Publishing LLC.
Descripción:	Taboada, A. G. et al.
Versión del editor:	http://dx.doi.org/10.1063/1.4861864
URI:	http://hdl.handle.net/10261/132604
DOI:	10.1063/1.4861864
Identificadores:	issn: 0003-6951 e-issn: 1077-3118
Aparece en las colecciones:	(IMN-CNM) Artículos

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Strain relaxation of GaAs/Ge crystals on patterned Si substrates