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Effects of seeding and amounts of Y2O3:Al2O3 additives on grain growth in Si3N4 ceramics

AuthorsBelmonte, Manuel ; Pablos, Ángel de ; Osendi, María Isabel ; Miranzo López, Pilar
KeywordsGrain growth
Silicon nitride
Issue Date25-Feb-2008
CitationMaterials Science and Engineering A 475(1-2): 185-189 (2008)
AbstractThe effect of changing the Y2O3:Al2O3 additive ratio over grain growth of Si3N4 materials with and without β-seeds addition is studied. Increasing the amount of Al2O3 from 2 to 4 wt.% strongly affects grain growth in non-seeded materials whereas it hardly does in seeded ones. Results suggest that β-seeds addition changes the rate limiting step for the Si3N4 grain growth from diffusion to interfacial reaction.
Description5 pages, 4 figures, 4 tables.-- Available online Apr 13, 2007.-- Issue title: International Symposium on Inorganic Interfacial Engineering 2006 (Stockholm, June 20-21, 2006).
Publisher version (URL)http://dx.doi.org/10.1016/j.msea.2007.04.034
Appears in Collections:(ICV) Artículos
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