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Título: | Four-state ferroelectric spin-valve |
Autor: | Quindeau, Andy; Fina, Ignasi CSIC ORCID CVN ; Martí, Xavier CSIC ORCID; Apachitei, Geanina; Ferrer, Pilar CSIC ORCID; Nicklin, Chris; Pippel, Eckhard; Hesse, Dietrich; Alexe, Marin | Fecha de publicación: | 2015 | Editor: | Nature Publishing Group | Citación: | Scientific Reports 5: 9749 (2015) | Resumen: | Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction. | Descripción: | This work is licensed under a Creative Commons Attribution 4.0 International License. | Versión del editor: | http://dx.doi.org/10.1038/srep09749 | URI: | http://hdl.handle.net/10261/131679 | DOI: | 10.1038/srep09749 | Identificadores: | doi: 10.1038/srep09749 issn: 2045-2322 |
Aparece en las colecciones: | (CIN2) Artículos |
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Four-state.pdf | 853,19 kB | Adobe PDF | Visualizar/Abrir |
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