Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/12729
COMPARTIR / EXPORTAR:
logo share SHARE logo core CORE BASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE

Invitar a revisión por pares abierta
Título

Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy

AutorGonzález-Arrabal, Raquel CSIC ORCID; González Díez, Yolanda CSIC ORCID; González Sotos, Luisa CSIC ORCID ; García-Hernández, Mar CSIC ORCID ; Munnik, F.; Martín-González, Marisol CSIC ORCID
Palabras claveArgon compounds
Channelling
Diamagnetism
Ferromagnetic materials
Gallium arsenide
III-V semiconductors
Indium compounds
Ion implantation
Magnetic susceptibility
Magnetic thin films
Manganese compounds
Molecular beam epitaxial growth
X-ray diffraction
X-ray chemical analysis
Rutherford backscattering
Semiconductor epitaxial layers
Fecha de publicación6-abr-2009
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 105, 073911 (2009)
ResumenWe report on the magnetic and structural properties of Ar- and Mn-implanted InAs epitaxial films grown on GaAs (100) by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) for 30 s at 750 °C. Channeling particle induced x-ray emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are substitutional in the In site of the InAs lattice, like in a diluted magnetic semiconductor. All of these samples show diamagnetic behavior. However, after RTA treatment the Mn–InAs films exhibit room-temperature magnetism. According to PIXE measurements the Mn atoms are no longer substitutional. When the same set of experiments was performed with Ar as implantation ion, all of the layers present diamagnetism without exception. This indicates that the appearance of room-temperature ferromagneticlike behavior in the Mn–InAs-RTA layer is not related to lattice disorder produced during implantation but to a Mn reaction produced after a short thermal treatment. X-ray diffraction patterns and Rutherford backscattering measurements evidence the segregation of an oxygen-deficient MnO2 phase (nominally MnO1.94) in the Mn–InAs-RTA epitaxial layers which might be the origin of the room-temperature ferromagneticlike response observed.
Versión del editorhttp://link.aip.org
http://dx.doi.org/10.1063/1.3087477
URIhttp://hdl.handle.net/10261/12729
DOI10.1063/1.3087477
ISSN0021-8979
Aparece en las colecciones: (IMN-CNM) Artículos
(ICMM) Artículos




Ficheros en este ítem:
Fichero Descripción Tamaño Formato
González-Arrabal, R et al JApplPhys_105_2009.pdf389,74 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo

CORE Recommender

SCOPUSTM   
Citations

2
checked on 23-mar-2024

WEB OF SCIENCETM
Citations

2
checked on 25-feb-2024

Page view(s)

374
checked on 28-mar-2024

Download(s)

286
checked on 28-mar-2024

Google ScholarTM

Check

Altmetric

Altmetric


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.