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Título: | Charge collection efficiency degradation on Si diodes irradiated with high energy protons |
Autor: | García López, J. CSIC ORCID; Jiménez-Ramos, M. C. CSIC ORCID | Fecha de publicación: | 2014 | Editor: | Elsevier | Citación: | Nuclear Instruments and Methods in Physics Research - Section B 332: 220-223 (2014) | Resumen: | The charge collection efficiency (CCE) of several p-type Si diodes has been determined by the Ion Beam Induced Charge (IBIC) technique with 4 MeV protons. In addition, the time evolution of the collected carriers has been recorded as a function of the reverse bias voltage. The diodes were irradiated in our cyclotron with 17 MeV protons and fluences ranging from 3.3 × 10 11 to 1.65 × 1013 p/cm2. The high energy irradiation was selected because of the practically constant value of the proton stopping power across the samples, leading to a uniform vacancy profile with depth. It is observed that the CEE decreases linearly with radiation fluence while the leakage current increases with ion dose. From these results, the diffusion length of minority carriers, the damage constant and the damage coefficient of p-type Si diodes have been evaluated. © 2014 Elsevier B.V. All rights reserved. | Descripción: | Trabajo presentado a la: "21st International Conference on Ion Beam Analysis", celebrada en Seattle (US) del 23 al 28 de junio de 2013. | URI: | http://hdl.handle.net/10261/123127 | DOI: | 10.1016/j.nimb.2014.02.065 | Identificadores: | doi: 10.1016/j.nimb.2014.02.065 issn: 0168-583X |
Aparece en las colecciones: | (CNA) Artículos |
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