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Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

AuthorsRipalda, José María ; Alonso-Álvarez, Diego ; Alén, Benito ; Taboada, Alfonso G.; García Martínez, Jorge Manuel ; González Díez, Yolanda ; González Sotos, Luisa
KeywordsIndium compounds
Gallium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Issue Date5-Jul-2007
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 91, 012111 (2007)
AbstractThe authors have studied the use of antimony for the optimization of the InAs/GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3 µm spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separating the InAs and the GaSb layers. This results in an order of magnitude enhancement of the room temperature luminescence intensity at 1.3 µm emission wavelength.
Publisher version (URL)http://link.aip.org
Appears in Collections:(IMN-CNM) Artículos
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