Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/12275
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Título : Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping
Autor : Ripalda, José María, Alonso-Álvarez, Diego, Alén, Benito, Taboada, A. G., García Martínez, Jorge Manuel, González Díez, Yolanda, González Sotos, Luisa
Palabras clave : Indium compounds
Gallium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Self-assembly
Monolayers
Luminescence
Fecha de publicación : 5-Jul-2007
Editor: American Institute of Physics
Resumen: The authors have studied the use of antimony for the optimization of the InAs/GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3 µm spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separating the InAs and the GaSb layers. This results in an order of magnitude enhancement of the room temperature luminescence intensity at 1.3 µm emission wavelength.
Versión del editor: http://link.aip.org
http://d.doi.org/10.1063/1.2753716
URI : http://hdl.handle.net/10261/12275
ISSN: 0003-6951
DOI: 10.1063/1.2753716
Citación : Applied Physics Letters 91, 012111 (2007)
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