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Título : Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping
Autor : Ripalda, José María, Alonso-Álvarez, Diego, Alén, Benito, Taboada, A. G., García Martínez, Jorge Manuel, González Díez, Yolanda, González Sotos, Luisa
Palabras clave : Indium compounds
Gallium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Fecha de publicación : 5-Jul-2007
Editor: American Institute of Physics
Resumen: The authors have studied the use of antimony for the optimization of the InAs/GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3 µm spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separating the InAs and the GaSb layers. This results in an order of magnitude enhancement of the room temperature luminescence intensity at 1.3 µm emission wavelength.
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ISSN: 0003-6951
DOI: 10.1063/1.2753716
Citación : Applied Physics Letters 91, 012111 (2007)
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