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Open Access item Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

Authors:Ripalda, José María
Alonso-Álvarez, D.
Alén, Benito
Taboada, A. G.
García, Jorge M.
González, Yolanda
González, Luisa
Keywords:Indium compounds, Gallium compounds, Gallium arsenide, III-V semiconductors, Semiconductor quantum dots, Self-assembly, Monolayers, Luminescence
Issue Date:5-Jul-2007
Publisher:American Institute of Physics
Citation:Applied Physics Letters 91, 012111 (2007)
Abstract:The authors have studied the use of antimony for the optimization of the InAs/GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3 µm spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separating the InAs and the GaSb layers. This results in an order of magnitude enhancement of the room temperature luminescence intensity at 1.3 µm emission wavelength.
Publisher version (URL):http://link.aip.org
Appears in Collections:(IMM-CNM) Artículos

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