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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/12275
Title: Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping
Authors: Ripalda, José María; Alonso-Álvarez, Diego; Alén, Benito; Taboada, A. G.; García Martínez, Jorge Manuel; González Díez, Yolanda; González Sotos, Luisa
Keywords: Indium compounds
Gallium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Issue Date: 5-Jul-2007
Publisher: American Institute of Physics
Citation: Applied Physics Letters 91, 012111 (2007)
Abstract: The authors have studied the use of antimony for the optimization of the InAs/GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3 µm spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separating the InAs and the GaSb layers. This results in an order of magnitude enhancement of the room temperature luminescence intensity at 1.3 µm emission wavelength.
Publisher version (URL): http://link.aip.org
URI: http://hdl.handle.net/10261/12275
ISSN: 0003-6951
DOI: 10.1063/1.2753716
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