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Título : Excitons in coupled InAs/InP self-assembled quantum wires
Autor : Sidor, Y., Partoens, B., Peeters, F. M., Ben, Teresa, Ponce, Arturo, Molina, Sergio I., Sales, D. L., Fuster, David, González Sotos, Luisa, González Díez, Yolanda
Palabras clave : Excitons
Indium compounds
III-V semiconductors
Semiconductor quantum wires
Ground states
Excited states
Fecha de publicación : 29-Mar-2007
Editor: American Physical Society
Citación : Physical Review B 75, 125120 (2007)
Resumen: Optical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective-mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated and the ground state, excited states, and the photoluminescence peak energies are calculated. Where possible, we compare with available photoluminescence data from which it was possible to determine the height of the quantum wires. An anticrossing of the energy of excited states is found for vertically coupled wires signaling a change of symmetry of the exciton wave function. This crossing is the signature of two different coupling regimes.
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ISSN: 1098-0121
DOI: 10.1103/PhysRevB.75.125120
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