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Electronic transport and magnetization dynamics in low-dimensional nanostructures made of bismuth and ferromagnetic metals

AutorSangiao, S.
DirectorMorellón, Luis; Teresa, José María de
Fecha de publicación2012
EditorUniversidad de Zaragoza
ResumenThe discovery of giant magnetoresistance (GMR) supposed a major breakthrough in Electronics that opened the way to new devices. At this time there was a considerable research effort devoted to the implementation of the phenomenon of anisotropic magnetoresistance (AMR) [1] in read-back heads used to read out the information in hard disk drives, but the AMR effect is small, of the order of a few percent, thus, the GMR effect reported by A. Fert of 50% change in resistance under magnetic field in Fe/Cr multilayers [2] had a very strong impact in recording industry. By December 1997, IBM introduced the first hard disk product using GMR heads and this substitution supposed an immediate growth rate up to 100% per year. GMR opened the door to a new field of science, spin electronics, where both properties of the electron, its charge and its spin are manipulated simultaneously, not only its charge as traditional Electronics does. It is likely that development of spin electronics will trigger a revolution in modern electronics.
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