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dc.contributor.authorAlonso-González, Pablo-
dc.contributor.authorAlén, Benito-
dc.contributor.authorFuster, David-
dc.contributor.authorGonzález Díez, Yolanda-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorMartínez Pastor, Juan Pascual-
dc.date.accessioned2009-04-01T09:14:31Z-
dc.date.available2009-04-01T09:14:31Z-
dc.date.issued2007-10-16-
dc.identifier.citationApplied Physics Letters 91, 163104 (2007)en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/11995-
dc.description.abstractWe present a study of the structural and optical properties of InAs quantum dots formed in a low density template of nanoholes fabricated by droplet epitaxy on GaAs (001). The growth conditions used here promote the formation of isolated quantum dots only inside the templated nanoholes. Due to the good optical quality and low density of these nanostructures, their ensemble and individual emission properties could be investigated and related to the particular growth method employed and the quantum dot morphology.en_US
dc.description.sponsorshipThe authors gratefully acknowledge the financial support by the Spanish MEC and CAM through project Nos. TEC-2005-05781-C03-01/-03 and NAN2004-09109-C04-01/-03, by the Consolider-Ingenio 2010 CSD2006-0019 and S-505/ESP/000200, and by the European Commission through SANDIE Network of Excellence No. NMP4-CT-2004- 500101 . P.A.G. thanks the I3P program.en_US
dc.format.extent344096 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.subjectCrystal morphologyen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectIndium compoundsen_US
dc.subjectnanotechnologyen_US
dc.subjectphotoluminescenceen_US
dc.subjectSemiconductor epitaxial layersen_US
dc.subjectSemiconductor growthen_US
dc.subjectsemiconductor quantum dotsen_US
dc.titleFormation and optical characterization of single InAs quantum dots grown on GaAs nanoholesen_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.2799736-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.2799736en_US
dc.relation.publisherversionhttp://link.aip.orgen_US
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.fulltextWith Fulltext-
item.grantfulltextopen-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairetypeartículo-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
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