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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/11995
Title: Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes
Authors: Alonso-González, Pablo ; Alén, Benito ; Fuster, David ; González Díez, Yolanda ; González Sotos, Luisa ; Martínez-Pastor, Juan
Keywords: crystal morphology
III-V semiconductors
indium compounds
semiconductor epitaxial layers
semiconductor growth
semiconductor quantum dots
Issue Date: 16-Oct-2007
Publisher: American Institute of Physics
Citation: Applied Physics Letters 91, 163104 (2007)
Abstract: We present a study of the structural and optical properties of InAs quantum dots formed in a low density template of nanoholes fabricated by droplet epitaxy on GaAs (001). The growth conditions used here promote the formation of isolated quantum dots only inside the templated nanoholes. Due to the good optical quality and low density of these nanostructures, their ensemble and individual emission properties could be investigated and related to the particular growth method employed and the quantum dot morphology.
Publisher version (URL): http://dx.doi.org/10.1063/1.2799736
URI: http://hdl.handle.net/10261/11995
DOI: 10.1063/1.2799736
ISSN: 0003-6951
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