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dc.contributor.authorSidor, Y.-
dc.contributor.authorPartoens, B.-
dc.contributor.authorPeeters, F. M.-
dc.contributor.authorMaes, J.-
dc.contributor.authorHayne, M.-
dc.contributor.authorFuster, David-
dc.contributor.authorGonzález Díez, Yolanda-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorMoshchalkov, V.V.-
dc.date.accessioned2009-04-01T09:09:29Z-
dc.date.available2009-04-01T09:09:29Z-
dc.date.issued2007-11-19-
dc.identifier.citationPhysical Review B 76, 195320 (2007)en_US
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10261/11994-
dc.description.abstractThe charge confinement in InAs/InP based quantum wells and self-assembled quantum wires is investigated theoretically and experimentally through the study of the exciton diamagnetic shift. The numerical calculations are performed within the single-band effective mass approximation, including band nonparabolicity and strain effects. The exciton diamagnetic shift is obtained for quantum wires and quantum wells incorporating local width fluctuations, as well as the electron-hole Coulomb interaction energy. Both electrons and holes (but to a lesser extent) show a substantial penetration into the InP barrier. A detailed comparison is made between the theoretical and experimental data on the magnetic field dependence of the exciton diamagnetic shift. Our theoretical analysis shows that excitons in the InAs/InP quantum well are trapped by local well width fluctuations.en_US
dc.description.sponsorshipThis work is supported by the Belgian Science Policy (IAP), the Flemish Science Foundation (FWO-Vl), the European Commission network of excellence: SANDiE, the Spanish MEC and CAM through Projects No. TEC-2005- 05781-C03-01 and No. NAN2004-09109-C04-01, and Consolider-Ingenio 2010 through Projects No. CSD2006-0019 and No. S-505/ESP/000200. M.H. acknowledges support of the Research Councils, UK. The authors thank A. Matulis for fruitful discussions.en_US
dc.format.extent775436 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsopenAccessen_US
dc.subjectDiamagnetismen_US
dc.subjectEffective massen_US
dc.subjectExcitonsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectIndium compoundsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSelf-assemblyen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectSemiconductor quantum wiresen_US
dc.titleExciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic fielden_US
dc.typeartículoen_US
dc.identifier.doi10.1103/PhysRevB.76.195320-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1103/PhysRevB.76.195320en_US
dc.relation.publisherversionhttp://link.aps.orgen_US
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.openairetypeartículo-
item.grantfulltextopen-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.languageiso639-1en-
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