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Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/11966
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dc.contributor.authorMolina, Sergio I.-
dc.contributor.authorVarela, María-
dc.contributor.authorSales, David L.-
dc.contributor.authorBen, Teresa-
dc.contributor.authorPizarro, J.-
dc.contributor.authorGalindo, P. L.-
dc.contributor.authorFuster, David-
dc.contributor.authorGonzález Díez, Yolanda-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorPennycook, Stephen J.-
dc.date.accessioned2009-03-31T10:46:27Z-
dc.date.available2009-03-31T10:46:27Z-
dc.date.issued2007-10-02-
dc.identifier.citationApplied Physics Letters 91, 143112 (2007)en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/11966-
dc.description.abstractAtomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for strain-induced nucleation comes from the direct observation by postgrowth, atomic resolution, Z-contrast imaging of an InAs-rich region in a nanowire located on the upper terrace surface of an interfacial diatomic step.en_US
dc.description.sponsorshipThis work was supported by the DOE Office of Basic Energy Sciences, Division of Materials Sciences and Engineering (MV and SJP), the SANDiE European Network of Excellence (Contract No. NMP4-CT-2004-500101), the Spanish MEC (TEC2005-05781-C03-01 y 02, NAN2004-09109-C04-01, and Consolider-Ingenio 2010 CSD2006-00019), the CAM (S 0505ESP 0200), and the Junta de Andalucia (PAI research groups TEP-120 and TIC-145; Project No. PAI05-TEP-00383).en_US
dc.format.extent473031 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.subjectAtomic force microscopyen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectIndium compoundsen_US
dc.subjectInternal stressesen_US
dc.subjectMolecular beam epitaxial growthen_US
dc.subjectNanowiresen_US
dc.subjectNucleationen_US
dc.subjectScanning-transmission electron microscopyen_US
dc.subjectSelf-assemblyen_US
dc.subjectSemiconductor growthen_US
dc.subjectSemiconductor quantum wiresen_US
dc.subjectStress relaxationen_US
dc.titleDirect imaging of quantum wires nucleated at diatomic stepsen_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.2790483-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.2790483en_US
dc.relation.publisherversionhttp://link.aip.orgen_US
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.cerifentitytypePublications-
item.openairetypeartículo-
item.languageiso639-1en-
item.grantfulltextopen-
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