Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/11966
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Título : Direct imaging of quantum wires nucleated at diatomic steps
Autor : Molina, Sergio I., Varela, M., Sales, D. L., Ben, Teresa, Pizarro, J., Galindo, P. L., Fuster, David, González Díez, Yolanda, González Sotos, Luisa, Pennycook, S. J.
Palabras clave : Atomic force microscopy
III-V semiconductors
Indium compounds
Internal stresses
Molecular beam epitaxial growth
Nanowires
Nucleation
Scanning-transmission electron microscopy
Self-assembly
Semiconductor growth
Semiconductor quantum wires
Stress relaxation
Fecha de publicación : 2-Oct-2007
Editor: American Institute of Physics
Citación : Applied Physics Letters 91, 143112 (2007)
Resumen: Atomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for strain-induced nucleation comes from the direct observation by postgrowth, atomic resolution, Z-contrast imaging of an InAs-rich region in a nanowire located on the upper terrace surface of an interfacial diatomic step.
Versión del editor: http://dx.doi.org/10.1063/1.2790483
http://link.aip.org
URI : http://hdl.handle.net/10261/11966
ISSN: 0003-6951
DOI: 10.1063/1.2790483
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