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Título : Direct imaging of quantum wires nucleated at diatomic steps
Autor : Molina, Sergio I., Varela, M., Sales, D. L., Ben, Teresa, Pizarro, J., Galindo, P. L., Fuster, David, González Díez, Yolanda, González Sotos, Luisa, Pennycook, S. J.
Palabras clave : Atomic force microscopy
III-V semiconductors
Indium compounds
Internal stresses
Molecular beam epitaxial growth
Scanning-transmission electron microscopy
Semiconductor growth
Semiconductor quantum wires
Stress relaxation
Fecha de publicación : 2-Oct-2007
Editor: American Institute of Physics
Resumen: Atomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for strain-induced nucleation comes from the direct observation by postgrowth, atomic resolution, Z-contrast imaging of an InAs-rich region in a nanowire located on the upper terrace surface of an interfacial diatomic step.
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ISSN: 0003-6951
DOI: 10.1063/1.2790483
Citación : Applied Physics Letters 91, 143112 (2007)
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