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Direct imaging of quantum wires nucleated at diatomic steps

AuthorsMolina, Sergio I.; Varela, María; Sales, David L.; Ben, Teresa; Pizarro, J.; Galindo, P. L.; Fuster, David ; González Díez, Yolanda ; González Sotos, Luisa ; Pennycook, Stephen J.
KeywordsAtomic force microscopy
III-V semiconductors
Indium compounds
Internal stresses
Molecular beam epitaxial growth
Scanning-transmission electron microscopy
Semiconductor growth
Semiconductor quantum wires
Stress relaxation
Issue Date2-Oct-2007
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 91, 143112 (2007)
AbstractAtomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for strain-induced nucleation comes from the direct observation by postgrowth, atomic resolution, Z-contrast imaging of an InAs-rich region in a nanowire located on the upper terrace surface of an interfacial diatomic step.
Publisher version (URL)http://dx.doi.org/10.1063/1.2790483
Appears in Collections:(IMN-CNM) Artículos
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