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Título: | Optical investigation of type II GaSb/GaAs self-assembled quantum dots |
Autor: | Alonso-Álvarez, Diego CSIC; Alén, Benito CSIC ORCID; García Martínez, Jorge Manuel CSIC ORCID CVN ; Ripalda, José María CSIC ORCID | Palabras clave: | Gallium arsenide Gallium compounds III-V semiconductors Photoconductivity Photoluminescence Self-assembly Semiconductor quantum dots Wetting |
Fecha de publicación: | 26-dic-2007 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 91, 263103 (2007) | Resumen: | We have studied the emission and absorption properties of type II GaSb/GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement potential for the holes to be ~500 meV, leading to an intense room temperature emission assisted by recapture processes from the wetting layer. Photocurrent measurements show strong absorption in the wetting layer and in the quantum dots at room temperature which are important for photodetection applications based in this system | Versión del editor: | http://dx.doi.org/10.1063/1.2827582 http://link.aip.org/link |
URI: | http://hdl.handle.net/10261/11941 | DOI: | 10.1063/1.2827582 | ISSN: | 0003-6951 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Fichero | Descripción | Tamaño | Formato | |
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Alonso-Alvarez, Diego et al ApplPhysLett_91_2007.pdf | 502,51 kB | Adobe PDF | Visualizar/Abrir |
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