Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/11941
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Título : Optical investigation of type II GaSb/GaAs self-assembled quantum dots
Autor : Alonso-Álvarez, Diego, Alén, Benito, García Martínez, Jorge Manuel, Ripalda, José María
Palabras clave : Gallium arsenide
Gallium compounds
III-V semiconductors
Photoconductivity
Photoluminescence
Self-assembly
Semiconductor quantum dots
Wetting
Fecha de publicación : 26-Dec-2007
Editor: American Institute of Physics
Citación : Applied Physics Letters 91, 263103 (2007)
Resumen: We have studied the emission and absorption properties of type II GaSb/GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement potential for the holes to be ~500 meV, leading to an intense room temperature emission assisted by recapture processes from the wetting layer. Photocurrent measurements show strong absorption in the wetting layer and in the quantum dots at room temperature which are important for photodetection applications based in this system
Versión del editor: http://dx.doi.org/10.1063/1.2827582
http://link.aip.org/link
URI : http://hdl.handle.net/10261/11941
ISSN: 0003-6951
DOI: 10.1063/1.2827582
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