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Open Access item Optical investigation of type II GaSb/GaAs self-assembled quantum dots

Authors:Alonso-Álvarez, D.
Alén, Benito
García, Jorge M.
Ripalda, José María
Keywords:Gallium arsenide, Gallium compounds, III-V semiconductors, Photoconductivity, Photoluminescence, Self-assembly, Semiconductor quantum dots, Wetting
Issue Date:26-Dec-2007
Publisher:American Institute of Physics
Citation:Applied Physics Letters 91, 263103 (2007)
Abstract:We have studied the emission and absorption properties of type II GaSb/GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement potential for the holes to be ~500 meV, leading to an intense room temperature emission assisted by recapture processes from the wetting layer. Photocurrent measurements show strong absorption in the wetting layer and in the quantum dots at room temperature which are important for photodetection applications based in this system
Publisher version (URL):http://dx.doi.org/10.1063/1.2827582
Appears in Collections:(IMM-CNM) Artículos

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