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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/11941
Title: Optical investigation of type II GaSb/GaAs self-assembled quantum dots
Authors: Alonso-Álvarez, Diego; Alén, Benito; García Martínez, Jorge Manuel; Ripalda, José María
Keywords: Gallium arsenide
Gallium compounds
III-V semiconductors
Semiconductor quantum dots
Issue Date: 26-Dec-2007
Publisher: American Institute of Physics
Citation: Applied Physics Letters 91, 263103 (2007)
Abstract: We have studied the emission and absorption properties of type II GaSb/GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement potential for the holes to be ~500 meV, leading to an intense room temperature emission assisted by recapture processes from the wetting layer. Photocurrent measurements show strong absorption in the wetting layer and in the quantum dots at room temperature which are important for photodetection applications based in this system
Publisher version (URL): http://dx.doi.org/10.1063/1.2827582
URI: http://hdl.handle.net/10261/11941
ISSN: 0003-6951
DOI: 10.1063/1.2827582
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