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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/11936
Title: Incorporation of Sb in InAs/GaAs quantum dots
Authors: Molina, Sergio I.; Sánchez, A. M.; Beltrán, A. M.; Sales, D. L.; Ben, Teresa; Chisholm, M. F.; Varela, M.; Pennycook, S. J.; Galindo, P. L.; Papworth, A. J.; Goodhew, P. J.; Ripalda, José María
Keywords: quantum dots
cobalt alloys
elemental semiconductors
scanning tunnelling microscopy
silicon alloys
surface reconstruction
Issue Date: 27-Dec-2007
Publisher: American Institute of Physics
Citation: Applied Physics Letters 91, 263105 (2007)
Abstract: Reactive epitaxy of Co on vicinal Si(111) surfaces is found to be a flexible and a convenient method for the preparation of dense arrays of Co silicide quantum dots. In the present work, submonolayer amounts of Co were deposited at 800 K on vicinal and flat Si surfaces, analyzing the resulting structures by scanning tunneling microscopy. On vicinal Si(111) surfaces with relatively narrow (~40–100 Å) terrace width, such reactive epitaxy leads to self-assembled arrays of CoSi2 quantum dots with a sharp size distribution function. In contrast, the growth of Co on flat Si(111) results in an inhomogeneous array of dots mixed with a variety of silicide phases
Publisher version (URL): http://dx.doi.org/10.1063/1.2826546
URI: http://hdl.handle.net/10261/11936
ISSN: 0003-6951
DOI: 10.1063/1.2826546
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