Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/11936
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Título : Incorporation of Sb in InAs/GaAs quantum dots
Autor : Molina, Sergio I., Sánchez, A. M., Beltrán, A. M., Sales, D. L., Ben, Teresa, Chisholm, M. F., Varela, M., Pennycook, S. J., Galindo, P. L., Papworth, A. J., Goodhew, P. J., Ripalda, José María
Palabras clave : quantum dots
cobalt alloys
elemental semiconductors
scanning tunnelling microscopy
self-assembly
silicon alloys
silicon
surface reconstruction
Fecha de publicación : 27-Dec-2007
Editor: American Institute of Physics
Resumen: Reactive epitaxy of Co on vicinal Si(111) surfaces is found to be a flexible and a convenient method for the preparation of dense arrays of Co silicide quantum dots. In the present work, submonolayer amounts of Co were deposited at 800 K on vicinal and flat Si surfaces, analyzing the resulting structures by scanning tunneling microscopy. On vicinal Si(111) surfaces with relatively narrow (~40–100 Å) terrace width, such reactive epitaxy leads to self-assembled arrays of CoSi2 quantum dots with a sharp size distribution function. In contrast, the growth of Co on flat Si(111) results in an inhomogeneous array of dots mixed with a variety of silicide phases
Versión del editor: http://dx.doi.org/10.1063/1.2826546
http://link.aip.org/link
URI : http://hdl.handle.net/10261/11936
ISSN: 0003-6951
DOI: 10.1063/1.2826546
Citación : Applied Physics Letters 91, 263105 (2007)
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