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dc.contributor.author | Postigo, Pablo Aitor | - |
dc.contributor.author | Suárez Arias, Ferrán | - |
dc.contributor.author | Sanz-Hervás, A. | - |
dc.contributor.author | Sangrador, J. | - |
dc.contributor.author | Fonstad, C. G. | - |
dc.date.accessioned | 2009-03-18T12:35:44Z | - |
dc.date.available | 2009-03-18T12:35:44Z | - |
dc.date.issued | 2008-01-09 | - |
dc.identifier.citation | Journal of Applied Physics 103(1): 013508 (2008) | en_US |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10261/11723 | - |
dc.description | 5 pages, 4 figures.-- PACS nrs.: 68.55.Ag; 81.15.Hi. | - |
dc.description.abstract | Direct heteroepitaxial growth of InP layers on GaAs (001) wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H*). The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200°C and different doses of H* were used; after this, the growth proceeded without H* while the temperature was increased slowly with time. The incorporation of H* drastically increased the critical layer thickness observed by reflection high-energy electron diffraction; it also caused a slight increase in the luminescence at room temperature, while it also drastically changed the low-temperature luminescence related to the presence of stoichiometric defects. The samples were processed by rapid thermal annealing. The annealing improved the crystalline quality of the InP layers measured by high-resolution x-ray diffraction, but did not affect their luminescent behavior significantly. | en_US |
dc.description.sponsorship | The authors acknowledge support from the European Network of Excellence IST-2-511616-NOE (PHOREMOST) and NMP4-CT-2004-500101 SANDIE, Spain-Italy Integrated Action HI2004-367/IT2304, Projects NAN2004-08843-C05-04, TEC-2005-05781-C03-01, NAN2004-09109-C04-01, and CONSOLIDER-Ingenio 2010 (CSD2006-00019). | en_US |
dc.format.extent | 101156 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | openAccess | en_US |
dc.subject | Gallium arsenide | en_US |
dc.subject | III-V semiconductors | en_US |
dc.subject | Indium compounds | en_US |
dc.subject | Luminescence | en_US |
dc.subject | Molecular beam epitaxial growth | en_US |
dc.subject | Rapid thermal annealing | en_US |
dc.subject | Reflection high energy electron diffraction | en_US |
dc.subject | Semiconductor epitaxial layers | en_US |
dc.subject | Semiconductor growth | en_US |
dc.subject | X-ray diffraction | en_US |
dc.title | Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy | en_US |
dc.type | artículo | en_US |
dc.identifier.doi | 10.1063/1.2824967 | - |
dc.description.peerreviewed | Peer reviewed | en_US |
dc.relation.publisherversion | http://dx.doi.org/10.1063/1.2824967 | en_US |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.openairetype | artículo | - |
item.cerifentitytype | Publications | - |
item.languageiso639-1 | en | - |
item.grantfulltext | open | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | With Fulltext | - |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Postigo_et_al_JApplPhys_103_2008.pdf | 98,79 kB | Adobe PDF | Visualizar/Abrir |
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