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dc.contributor.authorPostigo, Pablo Aitor-
dc.contributor.authorSuárez Arias, Ferrán-
dc.contributor.authorSanz-Hervás, A.-
dc.contributor.authorSangrador, J.-
dc.contributor.authorFonstad, C. G.-
dc.date.accessioned2009-03-18T12:35:44Z-
dc.date.available2009-03-18T12:35:44Z-
dc.date.issued2008-01-09-
dc.identifier.citationJournal of Applied Physics 103(1): 013508 (2008)en_US
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10261/11723-
dc.description5 pages, 4 figures.-- PACS nrs.: 68.55.Ag; 81.15.Hi.-
dc.description.abstractDirect heteroepitaxial growth of InP layers on GaAs (001) wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H*). The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200°C and different doses of H* were used; after this, the growth proceeded without H* while the temperature was increased slowly with time. The incorporation of H* drastically increased the critical layer thickness observed by reflection high-energy electron diffraction; it also caused a slight increase in the luminescence at room temperature, while it also drastically changed the low-temperature luminescence related to the presence of stoichiometric defects. The samples were processed by rapid thermal annealing. The annealing improved the crystalline quality of the InP layers measured by high-resolution x-ray diffraction, but did not affect their luminescent behavior significantly.en_US
dc.description.sponsorshipThe authors acknowledge support from the European Network of Excellence IST-2-511616-NOE (PHOREMOST) and NMP4-CT-2004-500101 SANDIE, Spain-Italy Integrated Action HI2004-367/IT2304, Projects NAN2004-08843-C05-04, TEC-2005-05781-C03-01, NAN2004-09109-C04-01, and CONSOLIDER-Ingenio 2010 (CSD2006-00019).en_US
dc.format.extent101156 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.subjectGallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectIndium compoundsen_US
dc.subjectLuminescenceen_US
dc.subjectMolecular beam epitaxial growthen_US
dc.subjectRapid thermal annealingen_US
dc.subjectReflection high energy electron diffractionen_US
dc.subjectSemiconductor epitaxial layersen_US
dc.subjectSemiconductor growthen_US
dc.subjectX-ray diffractionen_US
dc.titleGrowth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxyen_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.2824967-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.2824967en_US
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