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Open Access item Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

Authors:Martínez-Pastor, Juan
Fuster, David
Abellan, M.
Anguita, José Virgilio
Sochinskii, N. V.
Keywords:Cadmium compounds, Etching, II-VI semiconductors, Impurities, Ion beam assisted deposition, MOCVD, Photoluminescence, Sapphire, Semiconductor epitaxial layers, Spectral line intensity, Vapour phase epitaxial growth
Issue Date:10-Mar-2008
Publisher:American Institute of Physics
Citation:Journal of Applied Physics 103, 056108 (2008)
Abstract:We demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor pairs.
Publisher version (URL):http://dx.doi.org/10.1063/1.2874480
Appears in Collections:(IMM-CNM) Artículos

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