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Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/11694
Title: Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
Authors: Martínez-Pastor, Juan; Fuster, David ; Abellán Rubio, María de los Ángeles ; Anguita, José Virgilio ; Sochinskii, N. V.
Keywords: Cadmium compounds
II-VI semiconductors
Ion beam assisted deposition
Semiconductor epitaxial layers
Spectral line intensity
Vapour phase epitaxial growth
Issue Date: 10-Mar-2008
Publisher: American Institute of Physics
Citation: Journal of Applied Physics 103, 056108 (2008)
Abstract: We demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor pairs.
Description: http://link.aip.org/link/?JAPIAU/103/056108/1
Publisher version (URL): http://dx.doi.org/10.1063/1.2874480
URI: http://hdl.handle.net/10261/11694
DOI: 10.1063/1.2874480
ISSN: 0021-8979
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