Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/11694
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Título : Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
Autor : Martínez-Pastor, Juan, Fuster, David, Abellán Rubio, María de los Ángeles, Anguita, José Virgilio, Sochinskii, N. V.
Palabras clave : Cadmium compounds
Etching
II-VI semiconductors
Impurities
Ion beam assisted deposition
MOCVD
Photoluminescence
Sapphire
Semiconductor epitaxial layers
Spectral line intensity
Vapour phase epitaxial growth
Fecha de publicación : 10-Mar-2008
Editor: American Institute of Physics
Citación : Journal of Applied Physics 103, 056108 (2008)
Resumen: We demonstrated the effect of reactive ion beam etching (RIBE) process on the PL properties of CdTe/sapphire metal organic vapor phase epitaxy layers. At optimum conditions, the RIBE attack does not make significant morphological changes but it results in an increase of the concentration of acceptor impurities. This was revealed by an increase of the overall photoluminescence (PL) intensity and, simultaneously, a decrease of the PL decay time, more important on the low energy side of PL spectrum due to the recombination of carriers in acceptor pairs.
Descripción : http://link.aip.org/link/?JAPIAU/103/056108/1
Versión del editor: http://dx.doi.org/10.1063/1.2874480
URI : http://hdl.handle.net/10261/11694
ISSN: 0021-8979
DOI: 10.1063/1.2874480
Appears in Collections:(IMM-CNM) Artículos

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