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Open Access item Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells

Authors:Alonso-Álvarez, D.
Taboada, A. G.
Ripalda, José María
Alén, Benito
González, Yolanda
González, Luisa
García, Jorge M.
Briones Fernández-Pola, Fernando
Martí Vega, Antonio
Luque López, Antonio
Sánchez, A. M.
Molina, Sergio I.
Keywords:Electron-hole recombination, Gallium arsenide, III-V semiconductors, Photovoltaic cells, Semiconductor quantum dots, Solar cells, Thermal stability
Issue Date:25-Sep-2008
Publisher:American Institute of Physics
Citation:Applied Physics Letters 93, 123114 (2008)
Abstract:In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness of 18 nm using GaP monolayers for strain compensation. We find a good structural and optical quality of the fabricated samples including a planar growth front across the whole structure, a reduction in the quantum dot size inhomogeneity, and an enhanced thermal stability of the emission. The optimized quantum dot stack has been embedded in a solar cell structure and we discuss the benefits and disadvantages of this approach for high efficiency photovoltaic applications.
Description:3 páginas, 3 figuras.
Publisher version (URL):http://dx.doi.org./10.1063/1.2978243
Appears in Collections:(IMM-CNM) Artículos

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