Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/11690
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Título : Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells
Autor : Alonso-Álvarez, Diego, Taboada, A. G., Ripalda, José María, Alén, Benito, González Díez, Yolanda, González Sotos, Luisa, García Martínez, Jorge Manuel, Briones Fernández-Pola, Fernando, Martí Vega, Antonio, Luque López, Antonio, Sánchez, A. M., Molina, Sergio I.
Palabras clave : Electron-hole recombination
Gallium arsenide
III-V semiconductors
Photovoltaic cells
Semiconductor quantum dots
Solar cells
Thermal stability
Fecha de publicación : 25-Sep-2008
Editor: American Institute of Physics
Citación : Applied Physics Letters 93, 123114 (2008)
Resumen: In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness of 18 nm using GaP monolayers for strain compensation. We find a good structural and optical quality of the fabricated samples including a planar growth front across the whole structure, a reduction in the quantum dot size inhomogeneity, and an enhanced thermal stability of the emission. The optimized quantum dot stack has been embedded in a solar cell structure and we discuss the benefits and disadvantages of this approach for high efficiency photovoltaic applications.
Descripción : 3 páginas, 3 figuras.
Versión del editor: http://dx.doi.org./10.1063/1.2978243
URI : http://hdl.handle.net/10261/11690
ISSN: 0003-6951
DOI: 10.1063/1.2978243
Appears in Collections:(IMM-CNM) Artículos

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