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Decoupling of defect and short-range order contributions to resistivity recovery measurements in binary alloys

AutorGómez-Ferrer, B.; García-Cortés, I.; Marco, J.F. CSIC ORCID CVN ; Jiménez-Rey, D.; Vila, R.
Fecha de publicación2014
CitaciónPhysical Review B 90 (2014)
Resumen© 2014 American Physical Society. We report a new and improved approach that uses low-temperature resistivity recovery measurements to study the defect kinetics in metallic binary alloys. This method is able to decouple the effect related to the irradiation defect contribution to the resistivity from that of the short-range order, which is enhanced by the free migration of defects. This approach can provide reliable experimental data which are more suitable for comparisons with current computational models. Furthermore, the difference in this method with respect to the classical one is that our method gives information concerning the role of vacancies and interstitials on short-range order. The method is applied to a model alloy Fe-5%Cr, of interest for fusion applications, where short-range order effects have been previously found to play a role.
URIhttp://hdl.handle.net/10261/114450
DOI10.1103/PhysRevB.90.220102
Identificadoresdoi: 10.1103/PhysRevB.90.220102
issn: 1550-235X
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