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Radiation resistance of double-type double-sided 3D pixel sensors

AuthorsFernández, M. ; Jaramillo, R. ; Lozano Fantoba, Manuel; Muñoz Sánchez, F. J. ; Pellegrini, Giulio; Quirion, David; Rohe, T.; Vila, Iván
KeywordsVertex detectors
Solid state detectors
Position sensitive detectors
Radiation-hard detectors
Issue Date2013
CitationNuclear Instruments and Methods in Physics Research Section A 732: 137-140 (2013)
AbstractThe proposed high-luminosity upgrade of the Large Hadron Collider is expected to increase the instantaneous luminosity at the experiments' interaction points by a factor of ten. The vertex detector will be the subsystem most affected by the luminosity increase, raising substantially their occupancy and radiation-induced damage. To preserve the vertex physics performance under these new conditions, current pixel technologies have to be improved. Hybrid pixel sensors with double-sided double-type vertical electrodes (3D sensors) are becoming a mature technology for the detector layers closest to the interaction point due to their intrinsic radiation hardness. In addition, the double-sided implementation of the 3D pixel technology provides some additional technical advantages with respect to the single-sided implementation. For this study, 3D pixel sensors manufactured at the Centro Nacional de Microelectrónica of Barcelona (IMB-CNM) have been bonded to the PSI46 readout chip currently used by the Compact Muon Solenoid vertex detector. Detector performance before and after irradiation up to fluences of 5×1015neq/ cm2 is presented. © 2013 Elsevier Ltd. All rights reserved.
Identifiersdoi: 10.1016/j.nima.2013.05.121
issn: 0168-9002
Appears in Collections:(IFCA) Artículos
(IMB-CNM) Artículos
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