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Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

AuthorsKyoung Ryu, Yu; Postigo, Pablo Aitor ; García-Pérez, Fernando ; García García, Ricardo
Issue Date2014
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 104: 223112 (2014)
AbstractSilicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3-1.1 nm) are transferred into nanowires of 2-12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm2. Those values are the smallest obtained with a top-down lithography method. © 2014 AIP Publishing LLC.
Publisher version (URL)http://dx.doi.org/10.1063/1.4881977
Identifiersissn: 0003-6951
e-issn: 1077-3118
Appears in Collections:(ICMM) Artículos
(IMN-CNM) Artículos
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