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Título: | Strain balanced quantum posts for intermediate band solar cells |
Autor: | Alonso-Álvarez, Diego CSIC; Alén, Benito CSIC ORCID; Ripalda, José María CSIC ORCID ; González Taboada, Alfonso CSIC; Llorens Montolio, José Manuel CSIC ORCID; González Díez, Yolanda CSIC ORCID; González Sotos, Luisa CSIC ORCID ; Briones Fernández-Pola, Fernando CSIC; Antolín, Elisa CSIC ORCID; Ramiro, Íñigo; Martí Vega, Antonio; Luque López, Antonio; Roldán, M. A. CSIC ORCID; Hernández-Saz, J.; Herrera, Miriam; Molina, Sergio I. | Fecha de publicación: | 2010 | Editor: | Institute of Electrical and Electronics Engineers | Citación: | 35th IEEE Photovoltaic Specialists Conference: 000928-000933 (2010) | Resumen: | In this work we present strain balanced InAs quantum post of exceptional length in the context of photovoltaics. We discuss the general properties of these nanostructures and their impact in the practical implementation of an intermediate band solar cell. We have studied the photocurrent generated by strain balanced quantum posts embedded in a GaAs single crystal, and compared our results with quantum dot based devices. The incorporation of phosphorous in the matrix to partially compensate the accumulated stress enables a significant increase of the quantum post maximum length. The relative importance of tunneling and thermal escape processes is found to depend strongly on the geometry of the nanostructures. | Descripción: | Trabajo presentado al 35th PVSC, celebrado en Honolulu (US) del 20 al 25 de Junio de 2010. | Versión del editor: | http://dx.doi.org/10.1109/PVSC.2010.5614557 | URI: | http://hdl.handle.net/10261/103454 | DOI: | 10.1109/PVSC.2010.5614557 | Identificadores: | doi: 10.1109/PVSC.2010.5614557 isbn: 978-1-4244-5890-5 |
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Strain balanced quantum.pdf | 856,86 kB | Adobe PDF | Visualizar/Abrir |
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