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Título: | Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator |
Autor: | Men'shov, V. N.; Tugushev, V. V.; Chulkov, Eugene V. CSIC ORCID | Fecha de publicación: | 2012 | Editor: | Springer Nature | Citación: | JETP Letters 96(7): 445-451 (2012) | Resumen: | We report on theoretical study of the bound electron states induced by a ferromagnetic delta-layer embedded into a narrow-band-gap semiconductor of the Bi2Se3-type which is a three-dimensional topological insulator with large spin-orbit coupling. We make use of an effective Hamiltonian taking into account the inverted band structure of the semiconductor host at the Γ point and describe the properties of the in-gap bound states: energy spectrum, characteristic length and spin polarization. We highlight a role of these states for a magnetic proximity effect in digital magnetic heterostructures based on the Bi2Se3-type semiconductors. © 2012 Pleiades Publishing, Ltd. | URI: | http://hdl.handle.net/10261/101700 | DOI: | 10.1134/S0021364012190113 | Identificadores: | doi: 10.1134/S0021364012190113 issn: 0021-3640 e-issn: 1090-6487 |
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