2024-03-28T17:11:43Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/209842018-07-16T07:15:39Zcom_10261_82com_10261_8col_10261_335
Pulsed Laser Melting Effects on Single Crystal Gallium Phosphide
Pastor, D.
Olea, Javier
Toledano-Luque, M.
Mártil, Ignacio
González-Díaz, G.
Ibáñez Insa, Jordi
Cuscó, Ramón
Artús, Lluís
Hall effect
III-V semiconductors
Raman spectroscopy
X-ray diffraction
Gallium compounds
Ion implantation
Pulsed laser deposition
Hall effect measurements
Raman spectroscopy
Glancing incidence X-ray diffraction
Pulsed
Laser melting effects
Single crystal
Van der Pauw
We have investigated the pulse laser melting (PLM) effects on single crystal GaP. The samples have been studied by means of Raman spectroscopy, glancing incidence X-ray diffraction (GIRXD), van der Pauw and Hall effect measurements. After PLM process, the Raman spectra of samples annealed with the highest energy density show a forbidden TO vibrational mode of GaP. This suggests the formation of crystalline domains with a different orientation in the GaP PLM region regarding to the GaP unannealed region. This behavior has been corroborated by glancing incidence x-ray diffraction measurements. A slightly increase in the sheet resistivity and a suppression of the mobility in PLM samples have been observed in all the measured temperature range. Such annealing effects are a cause of great concern for intermediate band (IB) materials formation where PLM processes are required first, to recovery the lattice crystallinity after high dose ion implantation processes and second, to avoid impurities outdiffusion when the solid solubility limit is exceeded.
2010-02-12T10:15:35Z
2010-02-12T10:15:35Z
2009-03
artículo
Proceedings Spanish Conference on Electron Devices: 42 (2009)
978-1-4244-2839-7/09
http://hdl.handle.net/10261/20984
10.1109/SCED.2009.4800425
eng
http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=4800405&arnumber=4800425&count=130&index=15
openAccess
Institute of Electrical and Electronics Engineers