2024-03-29T05:04:31Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/338112022-01-20T11:13:54Zcom_10261_36com_10261_4col_10261_289
Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures
Dunstan, D. J.
Kidd, P.
David, J. P. R.
González Sotos, Luisa
González Díez, Yolanda
3 páginas, 1 figura, 1 tabla.-- et al.
The plastic relaxation of multilayer structures of strained InGaAs grown above critical thickness on GaAs is reported and compared with the relaxation of single layers and with theory. We show that a composite structure, taken as a whole, follows the same relaxation law as observed in single layers. However, departures of the strains of some component layers from theory show that misfit dislocations are easily pinned at an interface. Implications for the design of relaxed buffer layer growth are discussed.
This work was supported financially
by the Royal Society and the Science and Engineering
Research Council (UK), and by the Commission of the European
Communities (ESPRIT Basic Research 6854 BLES
programme).
Peer reviewed
2011-03-28T07:57:16Z
2011-03-28T07:57:16Z
1994-08-15
artículo
http://purl.org/coar/resource_type/c_6501
Applied Physics Letters 65(7): 839-841 (1994)
0003-6951
http://hdl.handle.net/10261/33811
10.1063/1.112177
en
http://dx.doi.org/10.1063/1.112177
open
American Institute of Physics