2024-03-28T14:41:19Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/210702019-06-06T13:14:00Zcom_10261_89com_10261_3col_10261_342
Orientation of graphitic planes during the bias-enhanced nucleation of diamond on silicon: An x-ray absorption near-edge study
Jiménez Guerrero, Ignacio
García-Hernández, M.
Albella, J. M.
Terminello, Louis J.
3 pages, 2 figures.
The bias-enhanced nucleation of diamond on Si(100) is studied by angle-dependent x-ray absorption near-edge spectroscopy (XANES). During diamond nucleation, a graphitic phase is also detected. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface. Implications of this result on the mechanism of bias-enhanced nucleation are discussed.
This work has been partially financed by the Spanish
CICYT under Projects Nos. MAT96-0529 and PB94-53, the
NATO Project CRG-971539, and the U.S. Department of
Energy through Lawrence Livermore National Laboratory
under Contract No. W-7405-ENG-48. The work was performed
at the Stanford Synchrotron Radiation Laboratory,
which is supported by the DOE, Office of Basic Energy Science.
Peer reviewed
2010-02-15T11:30:39Z
2010-02-15T11:30:39Z
1998-11-16
artículo
http://purl.org/coar/resource_type/c_6501
Applied Physics Letters 73(20): 2911 (1998)
0003-6951
http://hdl.handle.net/10261/21070
10.1063/1.122627
en
http://dx.doi.org/10.1063/1.122627
open
60305 bytes
application/pdf
American Institute of Physics