2024-03-19T05:16:51Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/193362017-02-27T16:48:20Zcom_10261_36com_10261_4col_10261_289
Room temperature emission at 1.6 µm from InGaAs quantum dots capped with GaAsSb
Ripalda, José María
Granados, Daniel
González Díez, Yolanda
Sánchez, A. M.
Molina, Sergio I.
García Martínez, Jorge Manuel
Gallium arsenide
Indium compounds
III-V semiconductors
Photoluminescence
Semiconductor quantum dots
Semiconductor quantum wells
Red shift
Transmission electron microscopy
Room temperature photoluminescence at 1.6 µm is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results.
This work was supported by the Spanish MCyT under NANOSELF project TIC2002-04096, by CAM project GR/MAT/0726/2004, by the SANDiE Network of excellence (Contract No. NMP4-CT-2004-500101) and the Junta de Andalucía
(Group Tep-0120). J.M.R. acknowledges support
through a Ramón y Cajal grant. TEM measurements were carried out at DME-SCCYT, UCA.
Peer reviewed
2009-12-04T08:14:55Z
2009-12-04T08:14:55Z
2005-11-09
artículo
http://purl.org/coar/resource_type/c_6501
Applied Physics Letters 87, 202108 (2005)
0003-6951
http://hdl.handle.net/10261/19336
10.1063/1.2130529
en
http://link.aip.org/link/?APPLAB/87/202108/1
http://dx.doi.org/10.1063/1.2130529
open
109674 bytes
application/pdf
American Institute of Physics