2024-03-29T12:34:37Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/119662022-01-20T11:12:36Zcom_10261_36com_10261_4col_10261_289
Direct imaging of quantum wires nucleated at diatomic steps
Molina, Sergio I.
Varela, María
Sales, David L.
Ben, Teresa
Pizarro, J.
Galindo, P. L.
Fuster, David
González Díez, Yolanda
González Sotos, Luisa
Pennycook, Stephen J.
Atomic force microscopy
III-V semiconductors
Indium compounds
Internal stresses
Molecular beam epitaxial growth
Nanowires
Nucleation
Scanning-transmission electron microscopy
Self-assembly
Semiconductor growth
Semiconductor quantum wires
Stress relaxation
Atomic steps at growth surfaces are important heterogeneous sources for nucleation of epitaxial nano-objects. In the presence of misfit strain, we show that the nucleation process takes place referentially at the upper terrace of the step as a result of the local stress relaxation. Evidence for strain-induced nucleation comes from the direct observation by postgrowth, atomic resolution, Z-contrast imaging of an InAs-rich region in a nanowire located on the upper terrace surface of an interfacial diatomic step.
This work was supported by the DOE Office of Basic Energy Sciences, Division of Materials Sciences and Engineering (MV and SJP), the SANDiE European Network of Excellence (Contract No. NMP4-CT-2004-500101), the
Spanish MEC (TEC2005-05781-C03-01 y 02, NAN2004-09109-C04-01, and Consolider-Ingenio 2010 CSD2006-00019), the CAM (S 0505ESP 0200), and the Junta de Andalucia (PAI research groups TEP-120 and TIC-145; Project
No. PAI05-TEP-00383).
Peer reviewed
2009-03-31T10:46:27Z
2009-03-31T10:46:27Z
2007-10-02
artículo
http://purl.org/coar/resource_type/c_6501
Applied Physics Letters 91, 143112 (2007)
0003-6951
http://hdl.handle.net/10261/11966
10.1063/1.2790483
en
http://dx.doi.org/10.1063/1.2790483
http://link.aip.org
open
473031 bytes
application/pdf
American Institute of Physics