2024-03-28T15:44:24Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/338262022-01-20T11:13:17Zcom_10261_36com_10261_4col_10261_289
Molina, Sergio I.
Aragón, G.
García, Rafael
González Díez, Yolanda
González Sotos, Luisa
Briones Fernández-Pola, Fernando
2011-03-28T09:55:36Z
2011-03-28T09:55:36Z
1993
Journal of Electronic Materials 22(5): 565-572 (1993)
0361-5235
http://hdl.handle.net/10261/33826
10.1007/BF02661632
A study by high resolution electron microscopy and conventional transmission electron microscopy of the process of closure of antiphase boundaries (APB) in atomic layer molecular beam epitaxy (ALMBE) grown GaAs on silicon is reported. A parallelepipedical shape, closed at the top by another boundary with a semispheric shape, is proposed for the during growth suppressed APBs in GaAs epilayers. Antiphase boundaries are mostly located in {100} plans. Sixty degree dislocations are involved in the process of bending of APBs from {110} to {11n} planes; this bending is the initial step which must take place to get a single domain by interaction of two APBs. The proposed shape for closed APBs is in good agreement with the quasi two-dimensional growth observed for GaAs grown on silicon by ALMBE.
eng
closedAccess
ALMBE
Antiphase boundaries
GaAs on silicon
A study of the evolution process of antiphase boundaries in GaAs on Si
artículo