2024-03-28T19:08:53Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/1821122019-05-24T00:58:33Zcom_10261_36com_10261_4col_10261_415
Ruiz-Gómez, Sandra
Muñoz Sánchez, Manuel
Guerrero, Rubén
Foerster, Michael
Aballe, Lucía
Amado, Mario
Robinson, J. W. A.
Mascaraque, Arantzazu
Pérez, Lucas
2019-05-23T07:57:34Z
2019-05-23T07:57:34Z
2018-09-03
JEMS (2018)
http://hdl.handle.net/10261/182112
In the field of spintronics, the Spin Hall Effect provides an efficient tool for the conversion of a charge
current into a spin current without the need of ferromagnets [1]. Recently, a Spin Hall Angle of 0.25 has been
measured in Cu doped with 0.25% Bi [2] and larger values of are expected for larger Bi doping according to
theoretical calculations [3].
In this work we incorporate up to 10% of Bi atoms into the Cu structure without evidence of Bi surface
segregation of cluster formation, as studied by several microscopic and spectroscopic techniques. We
investigate the spin pumping effect in a series of yttrium-iron-garnet (YIG)–Cu(Bi) bilayers by the
measurement of broadband ferromagnetic resonance (FMR). We determine the effective spin-mixing
conductance as a function of Bi concentration by comparing the FMR response of pure YIG layers and
Cu(Bi)/YIG bilayers in a frequency range from 2-10 GHz. With a Cu(Bi) layer on top of the YIG the Hilbert
damping is significantly enhanced (up to 40%). The effective spin-mixing conductance extracted from the
ferromagnetic resonance experiments increase with the Bi concentrations up to a value of Geff = 7.3x1018 m2
.
[1] J. Sinova et al. Rev. Mod. Phys. 87, 1213 (2015)
[2] Y. Niimi et al. Phys. Rev. Lett. 109, 156606 (2012)
[3] B. Gu, et al. J. Appl. Phys. 117, 17D503, (2015).
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Large spin-mixing conductance in Bi-doped Cu/YIG interfaces
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