2024-03-29T01:42:48Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/876582018-05-04T07:48:46Zcom_10261_93com_10261_4col_10261_346
00925njm 22002777a 4500
dc
Abrutis, A.
author
Plausinaitiene, V.
author
Skapas, M.
author
Wiemer, C.
author
Salicio, O.
author
Longo, M.
author
Pirovano, A.
author
Siegel, Jan
author
Gawelda, W.
author
Rushworth, S.
author
2008
Films of chalcogenide Ge-Sb-Te materials were grown by pulsed liquid injection chemical vapor deposition (CVD) technique. Simple thermal CVD without additional process activation and CVD with remote activation of precursor decomposition process by a hot-wire were investigated and compared. Ge(NMe2)4, Sb(NMe2)3 and Te(i-Pr)2 precursors in a form of diluted solutions in toluene were used for depositions. Film composition was controlled by injection parameters, while the thickness was directly related with number of pulses. Hot-wire activated CVD process allows the growth of chalcogenide films of clearly better quality compared to films grown by standard thermal CVD. Uniform, smooth, crystalline Ge2Sb2Te5 films were grown at substrate/wire temperature 300 °C/550 °C and pressure ≤ 15 Torr, using nitrogen as a carrier gas, on Si, Si/SiO2, Si/Si3N4 and glass substrates. Forty to forty five nanometer thick films on Si/SiO2 substrates showed reversible electrical and optical phase switching behavior. © 2008 Elsevier B.V. All rights reserved.
Microelectronic Engineering 85: 2338-2341 (2008)
http://hdl.handle.net/10261/87658
10.1016/j.mee.2008.09.014
Phase-change memories
Ge–Sb–Te
Chalcogenide films
MOCVD
Chemical vapor deposition of chalcogenide materials for phase-change memories