2024-03-28T11:32:07Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/337562022-01-20T11:13:27Zcom_10261_36com_10261_4col_10261_289
00925njm 22002777a 4500
dc
Rudamas, C.
author
Martínez Pastor, Juan Pascual
author
González Sotos, Luisa
author
Vinattieri, A.
author
Colocci, M.
author
2002-06
GaAs/InxGa1−xP quantum wells, with x=0.541 and 0.427, have been investigated by continuous wave and time resolved photoluminescence. Spatial localization of excitons due to alloy compositional defects seem to be responsible of the observed phenomenology: non-exponential decay behavior at long times and slow decrease of the effective recombination time by increasing temperature. A two-class exciton kinetic model, based on a mobility edge varying with the temperature explain the experimental results.
Surface Science 507-510: 619-623 (2002)
0039-6028
http://hdl.handle.net/10261/33756
10.1016/S0039-6028(02)01325-0
Quantum wells
Gallium arsenide
Quantum effects
Photoluminescence
Molecular beam epitaxy
Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures