2024-03-29T08:58:49Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/295452018-08-02T07:36:48Zcom_10261_101com_10261_5col_10261_1362
00925njm 22002777a 4500
dc
Luque López, Antonio
author
Flores, Fernando
author
Martí Vega, Antonio
author
Conesa Cegarra, José Carlos
author
Wahnón Benarroch, Perla
author
Ortega Mateo, José
author
Tablero, César
author
Pérez, Rubén
author
Cuadra, Lucas
author
2000-12-21
The invention relates to a solar cell containing a semiconductor (1) with an intermediate band (2) that is half filled with electrons, which is located between two layers of ordinary n type (3) and p type (4) semiconductors. When lighted, electron-hole pairs are formed either by a photon that absorbs the necessary energy (5) or by two photons (6, 7) that absorb less energy which pump an electron from the valence band to the intermediate band (8) and from the latter to the conductance band (9). An electrical current is generated that exits on the p side and returns via the n side. The n and p layers also prevent the intermediate band from contacting the outer metal connections, which would have resulted in a short-circuit. Said cell converts solar energy into electricity in a more efficient manner than conventional cells and contributes to the improvement of photovoltaic devices.
WO 00/77829 A2
http://hdl.handle.net/10261/29545
Intermediate band semiconductor photovoltaic solar cell