2024-03-29T08:02:53Zhttp://digital.csic.es/dspace-oai/requestoai:digital.csic.es:10261/2271272022-10-20T10:41:28Zcom_10261_90com_10261_4col_10261_469
00925njm 22002777a 4500
dc
Gontard, Lionel C.
author
Leñero-Bardallo, J. A.
author
Varela-Feria, Francisco M.
author
Carmona-Galán, R.
author
2020
This paper reports the use of vertically stacked photodiodes as compact solid-state spectrometers for transmission scanning electron microscopy. SEM microscopes operate by illuminating the sample with accelerated electrons. They can have one or more solid-state sensors. In this work we have tested a set of stacked photodiodes fabricated in a standard 180nm HV-CMOS technology without process modifications. We have measured their sensitivity to electron irradiation in the energy range between 10keV and 30keV. We have also assessed their radiation hardness. The experiments are compared with Monte Carlo simulations to investigate their spectral sensitivity
IEEE International Symposium on Circuits and Systems (ISCAS). 2020
http://hdl.handle.net/10261/227127
10.1109/ISCAS45731.2020.9181208
Photodiodes
Silicon
Scanning electron microscopy
Sensitivity
Semiconductor diodes
Electron beams
Vertically Stacked CMOS-compatible Photodiodes for Scanning Electron Microscopy